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Toshiba Starts Test-Sample Shipments of a Bare Die 1200V SiC MOSFET with Low On-Resistance and High Reliability, for Use in Automotive Traction Inverters
KAWASAKI, Japan — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed “X5M007E120,” a bare die[1] 1200V silicon carbide (SiC) MOSFET for automotive traction inverters[2] with an innovative structure that d
KAWASAKI, Japan -- Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die[1] 1200V silicon carbide (SiC) MOSFET for automotive traction inverters[2] with an innovative structure that deliver both low On-resistance and high reliability. Test samples are now shipping, for evaluation by customers. Read More
